本课程属于器件模型设计高级课程，适合具有一定基础的学员：偏重器件模型设计中的实际问题，比如如何看待基于物理意义的模型和纯拟合模型，特殊环境下的模型，以及如何判断模型对于设计的好坏。特别讨论了当前比较关心的模型，比如ELECTRO-THERMAL，RELIABILITY等问题。另外，高频下的测量和目前比较热门的RF-SOI模型也作了阐述。最后，对将来热门的新材料也做了展望，也同时对目前的模型参与者提出了有趣的研究方向。课程具体内容包括：

1、Introduction to compact modeling&specific model(Dr. Ardouin)

a、Advantages of physics based modeling over pure fitting models

b、Statistical modeling approaches

c、EDA tools, environments and flows related issues

d、Specific modeling examples: High temperature models, low temperature models,RF models

e、Q/A validation (circuit level)

2、What is necessary for a good model ? Part A/B (Dr. Ardouin)

a、Measurements

b、Measurements verification & validation

c、Compact Models: a brief review and history of (BSIM3/4, EKV, PSP, HiCUM, VBIC, Angelov)

d、Test chip, test structures: which strategy for DC & RF?

e、Extraction tools: which strategy for which model? (Global fitting, Binning, local extraction, accuracy criterion, etc.)

f、What is the impact on DESIGN? There’s no "one fits all model"

3、RF/Noise compact modeling of PD SOI CMOS technology (Dr. Valentin，invited)

4、Electro-thermal characterization of advanced technologies(Prof. Zimmer)

a、Measurements: Low frequency S-parameter measurements, pulsed DC and AC measurement

b、TCAD simulation

c、Electro-thermal compact model

d、Application to SiGe-HBT

e、Application to 28nm CMOS

f、Impact on circuit level

5、RF measurement methodology up to 100GHZ (Dr. Ardouin)

a、Frequency limitation of calibration and de-embedding technique for S parameter

b、EM simulation

6、Reliability related compact modeling with emphasis on life time prediction (Dr. Ardouin )

a、Importance of reliability aware model

b、Degradation mechanism and combination of aging model

c、Transistor compact model

d、Case study and reliability aware circuit

7、Outlook:"Graphene electronics: how far from industrial applications” (Prof. Zimmer)

五、授课专家简介：

Dr. Bertrand Ardouin

Bertrand Ardouin received the MS and Ph.D. degrees in electrical engineering from theUniversityofBordeaux1,Francein 1998 and 2001 respectively. His research activities were SiGe HBTs advanced modeling and characterization. In 2002, he has been one of the co-founder of XMOD technologies where he is currently the Manager and R&D director. Dr Ardouin was a member of the IEEE-BCTM CAD/Modeling subcommittee from 2006-2012.

Pr. Thomas Zimmer

Thomas Zimmer received the M.Sc. degree in physics from theUniversityofWürzburg,Germany, in 1989 and the Ph.D. degree in electronics from the University Bordeaux 1,Talence,France, in 1992. From 1989 to 1990, he was with the Fraunhofer Institute,Erlangen,Germany. Since 1992, he is with the IMS Institute,Talence,France. Since 2003, he is Professor at he UniversityBordeaux1. At the IMS lab, he is the leader of the research group “Nanoelectronics.” His research interests are focused on electrical compact modeling and characterization of HF devices such as HBT (SiGe, InP), graphene nanotubes and GFETs. He is Senior Member IEEE and served as a Reviewer for many journals (IEEE ED, EDL, SSE…) and participated on the Program Committee of several conferences (BCTM, ESSDERC …). He has published more than 150 peer-reviewed scientific articles, 1 book and contributed to 8 book-chapters.

Dr. Raphael Valentin（invited）

He received the Ph.D. degree in micro and nanotechnologies from theInstituteofElectronics, Microelectronics and Nanotechnology (IEMN), Villeneuve d’Ascq,France, in 2008. His Ph.D. degree research was on the device simulation/modeling and measurement of the nano-scaled Metallic Source/Drain Fully Depleted SOI transistors dedicated to high-frequency applications. He was working as Post Doc CEA LETI at ST Microelectronics in the Modeling Group. His main research interest concerned advanced radio frequency (up to 100 GHz) Compact Modeling of SOI CMOS devices dedicated to high speed/low power communications. He is currently working at Montage Tech, Inc, responsible for the Device and Modeling activities.